High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

M Kim, JH Jeong, HJ Lee, TK Ahn, HS Shin… - Applied Physics …, 2007 - pubs.aip.org
The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous
indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for …

[HTML][HTML] Uric acid induces fat accumulation via generation of endoplasmic reticulum stress and SREBP-1c activation in hepatocytes

YJ Choi, HS Shin, HS Choi, JW Park, I Jo, ES Oh… - Laboratory …, 2014 - Elsevier
Non-alcoholic fatty liver disease (NAFLD) is currently one of the most common types of chronic
liver injury. Elevated serum uric acid is a strong predictor of the development of fatty liver …

Uric acid-induced phenotypic transition of renal tubular cells as a novel mechanism of chronic kidney disease

ES Ryu, MJ Kim, HS Shin, YH Jang… - American Journal …, 2013 - journals.physiology.org
Recent experimental and clinical studies suggest a causal role of uric acid in the development
of chronic kidney disease. Most studies have focused on uric acid-induced endothelial …

Inkjet-printed InGaZnO thin film transistor

GH Kim, HS Kim, HS Shin, B Du Ahn, KH Kim, HJ Kim - Thin solid films, 2009 - Elsevier
We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared
by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-…

Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

GH Kim, B Du Ahn, HS Shin, WH Jeong, HJ Kim… - Applied Physics …, 2009 - pubs.aip.org
The effects of the indium content on characteristics of nanocrystalline InGaZnO (IGZO) films
grown by a sol-gel method and their thin film transistors (TFTs) have been investigated. …

Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

B Du Ahn, HS Shin, HJ Kim, JS Park… - Applied Physics …, 2008 - pubs.aip.org
We proposed a homojunctioned amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and
compared its performance to that of a conventional structured TFT. The source/drain regions …

Formation mechanism of solution-processed nanocrystalline InGaZnO thin film as active channel layer in thin-film transistor

GH Kim, HS Shin, B Du Ahn, KH Kim… - Journal of the …, 2008 - iopscience.iop.org
Solution-processed indium gallium zinc oxide (IGZO) thin films as an active channel layer in
thin-film transistors (TFTs) were successfully prepared by a spin-coating method using …

Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

GH Kim, WH Jeong, B Du Ahn, HS Shin, HJ Kim… - Applied Physics …, 2010 - pubs.aip.org
We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin
films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage …

In vitro inhibition of coronavirus replications by the traditionally used medicinal herbal extracts, Cimicifuga rhizoma, Meliae cortex, Coptidis rhizoma, and …

HY Kim, HS Shin, H Park, YC Kim, YG Yun… - Journal of clinical …, 2008 - Elsevier
BACKGROUND: A search for new anti-coronaviral drugs to treat coronaviral infections was
motivated by an outbreak of severe acute respiratory syndrome (SARS). OBJECTIVES: In …

Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

WJ Park, HS Shin, BD Ahn, GH Kim, SM Lee… - Applied Physics …, 2008 - pubs.aip.org
Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed
method and GZO TFTs were investigated according to the variation of the Ga doping …